Proprietary “deep-etch” technology
80º sidewalls for up to 900nm thickness of LiNbO3 etching (loss < 0.3 dB/cm)
Wafer-scale fabrication
Photonic and RF circuits with scalable and high throughput fabrication techniques.
Verified PDK
Our patented deep etching process allows extremely accurate dimensional control (40 nm tolerance) that facilitates a reliable Process Design Kit (PDK) library. Our PDK allows system-level design of photonic integrated circuits (PICs).
MPW runs
We offer Multi Project Wafer (MPW) runs that are either base-on or compatible with our PDK stack.
Dedicated Runs
We process dedicated wafer runs based on customs designs or our PDK.
Optical & RF testing
Our fully-automated characterization setups allow full-chip optical and RF characterization.
1 July 2023
Early-access MPW / LXT-LN001
Delivered
Measured performance
- Propagation loss: 20 dB/m (single mode) – <10 dB/m (multimode)
- Fiber-to-chip coupling loss: 1.7 dB/facet
- Electro-optic efficiency: VπL<3Vcm
- Electro-optic bandwidth: 40 GHz (3dB)
- Delivery date: 25 September 2023
16 October 2023
Early-access MPW / LXT-LN002
Ongoing
Targeted performance
- Propagation loss: 20 dB/m (single mode) – <10 dB/m (multimode)
- Fiber-to-chip coupling loss: 1.7 dB/facet
- Electro-optic efficiency: VπL<3Vcm
- Electro-optic bandwidth: 40 GHz (3dB)
- Expected delivery date: 30 January 2024
12 February 2024
Early-access MPW / LXT-LN003
Accepting Design
Targeted performance
- Propagation loss: 20 dB/m (single mode) – <10 dB/m (multimode)
- Fiber-to-chip coupling loss: 1.5 dB/facet
- Electro-optic efficiency: VπL<3Vcm
- Electro-optic bandwidth: 60 GHz (3dB)